Metal contact properties of poly3-octylthiophene thin films
Por:
Salinas O.H., López-Mata C., Hu H., Nicho M.E., Sánchez A.
Publicada:
1 ene 2006
Resumen:
Chemically synthesized undoped poly3-octylthiophene (P3OT) was deposited as thin films on conducting glass substrates by drop casting. Doping state of P3OT was obtained by adding FeCl3 into the original P3OT solution. A qualitative explanation of the electrical contact behavior of the P3OT films was given by a band diagram made from optical absorbance spectra and electrochemical current-voltage curves of the polymeric films. Gold contacts on both undoped and doped P3OT films give an ohmic contact. Silver/P3OT contact shows a rectifying behavior; the forward current is 500 times the reverse current at 0.5 V. Aluminum also forms rectifying contact with the two types of P3OT films, although the experimental rectification ratio is lower than that of the silver. The I-V curves of rectifying contacts were analyzed with Schottky equation and different diode parameters were obtained. © 2005 Elsevier B.V. All rights reserved.
Filiaciones:
Salinas O.H.:
Centro de Investigación en Energía, UNAM, Av.Xochicalco S/N, Temixco, Morelos, 62580, Mexico
López-Mata C.:
Centro de Investigación en Energía, UNAM, Av.Xochicalco S/N, Temixco, Morelos, 62580, Mexico
Instituto Tecnológico de Zacatepec, Zacatepec, Morelos, Mexico
Hu H.:
Centro de Investigación en Energía, UNAM, Av.Xochicalco S/N, Temixco, Morelos, 62580, Mexico
Nicho M.E.:
CIICAp-UAEM, Cuernavaca, Morelos, Mexico
Sánchez A.:
Centro de Investigación en Energía, UNAM, Av.Xochicalco S/N, Temixco, Morelos, 62580, Mexico
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