Modification of refractive index in silicon oxynitride films during deposition
Por:
MacHorro R., Samano E.C., Soto G., Villa F., Cota-Araiza L.
Publicada:
1 ene 2000
Resumen:
Inhomogeneous thin films of SiOxNy have been deposited by laser ablation of a Si3N4 sintered target in an oxygen gas environment. The high oxidation rate of silicon nitride has been used to control the film stoichiometry by varying the oxygen partial pressure. The refractive index of the deposited material was able to be tailored at any value from 1.47 (SiO2) to 2.3 (Si3N4) by this approach. In situ optical characterization of the growing layer on the film was performed using kinetic and spectroscopic ellipsometry. The effective medium approximation (EMA) was used to determine the composition and refractive index by considering a mixture of SiO2, Si3N4 and voids. The volumetric composition obtained by ellipsometry was compared to the results determined by AES and XPS characterization. The goal of this application is to show that reactive PLD can be used to produce high quality optical filters.
Filiaciones:
MacHorro R.:
Ctro. Cie. de la Materia Condensada, UNAM, A. Postal 2681, 22800 B.C., Ensenada, Mexico
Samano E.C.:
Ctro. Cie. de la Materia Condensada, UNAM, A. Postal 2681, 22800 B.C., Ensenada, Mexico
Soto G.:
Ctro. Cie. de la Materia Condensada, UNAM, A. Postal 2681, 22800 B.C., Ensenada, Mexico
Villa F.:
Centro de Investigaciones Opticas, Apdo. Postal I-948, Gto., Leon, Mexico
Cota-Araiza L.:
Ctro. Cie. de la Materia Condensada, UNAM, A. Postal 2681, 22800 B.C., Ensenada, Mexico
|