Effects of disorder on the electron pairing
Por:
Oviedo-Roa R., Wang C., Navarro O.
Publicada:
1 ene 1996
Resumen:
The electron pairing in randomly disordered lattices is studied by using an attractive Hubbard model, and by mapping the many-body problem onto a tight-binding one in a higher dimensional space, where a diagonal disorder is considered within the coherent-potential approximation. The results show an enhancement of the pair-binding energy as the self-energy difference increases in a binary alloy AxB1-x. This fact suggests that the pairing process is highly sensitive to the one-particle localization condition. A ground-state phase diagram for on-site interaction disorder shows regions where pairing is avoid for ordered diatomic systems but not for disordered case. © 1996 Plenum Publishing Corporation.
Filiaciones:
Oviedo-Roa R.:
Instituto de Investigaciones en Materiales, UNAM, Apartado Postal 70-360, 04510, México D.F., Mexico
Wang C.:
Instituto de Investigaciones en Materiales, UNAM, Apartado Postal 70-360, 04510, México D.F., Mexico
Navarro O.:
Instituto de Investigaciones en Materiales, UNAM, Apartado Postal 70-360, 04510, México D.F., Mexico
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