Identification of the impurity phase in chemically deposited CdS thin films


Por: Sebastian P.J., Hu Hailin

Publicada: 1 ene 1994
Resumen:
Identification of the impurity phase present in chemically deposited CdS thin films and in the precipitate used for screen printing CdS/CdTe solar cells is reported in this paper. X-ray diffraction (XRD) studies of the films and the precipitate showed that the impurity phase is a mixture of cadmium oxide sulphate (Cd3O2SO4) and cadmium oxide (CdO). Analysis of the films and the powders obtained using thiourea (TU) and thioacetamide (TA) as sulphurising agents showed that the impurity phase is predominantly present when TU is used in the chemical bath. The high conductivity shown by chemically deposited CdS films (using TU) when annealed at higher temperatures in air is attributed to the predominance of the conducting CdO phase in the film.

Filiaciones:
Sebastian P.J.:
 Photovoltaic Systems Group, Laboratori de Energia Solar, IIM, UNAM, Temixco, Morelos, 62580, Mexico
ISSN: 10579257
Editorial
John Wiley & Sons Ltd, Chichester, United Kingdom
Tipo de documento: Article
Volumen: 4 Número: 6
Páginas: 407-412