Tin oxide transparent conductive films prepared by a 30kHz glow discharge of SnCl4 and O2
Por:
Ortíz A., López S., Martínez E.
Publicada:
1 ene 1989
Resumen:
SnO2 transparent conductive coatings have been prepared by a 30 kHz glow discharge of SnCl4 and O2. The deposited films formed a rutile (tetragonal) SnO2 crystalline structure. The average optical transmission with reference to air is about 80%, and is almost independent from the substrate deposition temperature. The lowest sheet resistance measured was 18 ?/?, which could be associated with chlorine, from the starting material, incorporated as a donor impurity in the film. Tin oxide films prepared at substrate temperatures ?200 ° C, show that the sheet resistance increases up to 18% when they are baked in air at 400°C for 24 h. © 1989.
Filiaciones:
Ortíz A.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, México, D.F, Mexico
López S.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, México, D.F, Mexico
Martínez E.:
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, México, D.F, Mexico
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