White bright luminescence at room temperature from TEOS-based thin films via catalytic chemical vapor deposition


Por: Dutt A., Matsumoto Y., Godavarthi S., Santana-Rodríguez G., Santoyo-Salazar J., Escobosa A.

Publicada: 15 sep 2014
Resumen:
Strong white luminescence, visible to naked eye at room temperature, was observed from as grown SiOxCy thin films without the need of annealing. SiOxCy thin films were prepared by using catalytic chemical vapor deposition method (Cat-CVD) employing TEOS solution as the precursor and bubbled with the argon gas to form vapors. TEOS vapors were catalytically decomposed in the deposition chamber with the help of a tungsten filament. Scanning electron microscope (SEM) and transmission electron microscope (TEM) confirmed the formation of nano-crystals in SiO xCy matrix. Inter-atomic spacing shows the transition of Si-SiC nano-crystals in matrix. The intense emission is believed to come up either from the carbon incorporation in the nanocrystalline-structured film and/or quantum confinement effect of the observed nano-crystals in SiO xCy matrix. © 2014 Elsevier B.V.

Filiaciones:
Dutt A.:
 SEES, Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

Matsumoto Y.:
 SEES, Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

 Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

Godavarthi S.:
 Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

Santana-Rodríguez G.:
 Univ Nacl Autonoma Mexico, Inst Invest Mat, Coyoacan 04510, DF, Mexico

 Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Coyoacán 04510, Mexico

 Departamento de Física, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

Santoyo-Salazar J.:
 Departamento de Física, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico

Escobosa A.:
 SEES, Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Mexico City 07360, Mexico
ISSN: 0167577X
Editorial
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, Países Bajos
Tipo de documento: Note
Volumen: 131 Número:
Páginas: 295-297
WOS Id: 000340141800082