Evidence of the semiconductor-metal transition in V2O 5 thin films by the pulsed laser photoacoustic method
Por:
Perez-Pacheco, A, Acosta-Najarro, DR, Castaneda-Guzman, R, Cruz-Manjarrez, H, Rodriguez-Fernandez, L, Pineda-Santamaria, JC, Aguilar-Franco, M
Publicada:
14 may 2013
Categoría:
Physics and Astronomy (miscellaneous)
Resumen:
In this work, the pulsed photoacoustic technique was used to investigate the semiconductor-metal transition of thin vanadium pentoxide films (V 2O5) under increasing temperature. The V2O 5 thin films were simultaneously deposited by RF magnetron sputtering at room temperature, on corning glass and SnO2:F/glass substrates, in order to compare the photoacoustic response. The elemental and structural analysis of the V2O5 films was performed by Rutherford backscattering spectroscopy and X-ray diffraction. The optical transmission and band gap were determined using UV-Vis spectroscopy. The electrical properties were measured using four-point probe measurements with the Van der Pauw geometry. © 2013 AIP Publishing LLC.
Filiaciones:
Perez-Pacheco, A:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Acosta-Najarro, DR:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Castaneda-Guzman, R:
Univ Nacl Autonoma Mexico, CCADET, Lab Fotofis & Peliculas Delgadas, Mexico City 04510, DF, Mexico
Cruz-Manjarrez, H:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Rodriguez-Fernandez, L:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Pineda-Santamaria, JC:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
Aguilar-Franco, M:
Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
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