Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD
Por:
Matsumoto Y., Godavarthi S., Ortega M., Sánchez V., Velumani S., Mallick P.S.
Publicada:
2 may 2011
Resumen:
Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO(x).:H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
Filiaciones:
Matsumoto Y.:
Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Godavarthi S.:
Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Ortega M.:
Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Sánchez V.:
Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Velumani S.:
Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Program of Nanoscience and Nanotechnology, Centro de Investigación y de Estudios Avanzados Del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, Mexico
Mallick P.S.:
School of Electrical Sciences, Center for Nanotechnology, VIT University, Vellore, India
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