Analysis of a Bismuth Sulfide/Silicon Junction for Building Thin Film Solar Cells
Por:
Becerra, D, Nair, MTS, Nair, PK
Publicada:
1 ene 2011
Resumen:
Feasibility of combining p-type crystalline Si (c-Si) of 200-8000 nm in thickness with an n-type bismuth sulfide (Bi(2)S(3)) thin film of 300 nm in thickness for thin film solar cell is analyzed. Theoretical analysis shows that the high optical absorption coefficient (10(5) cm(-1)) of Bi(2)S(3) results in a light-generated current density (J(L)) of > 20 mA/cm(2) for a c-Si(200 nm)/Bi(2)S(3)(300 nm) stack at a combined film thickness of 500 nm, and with an open circuit voltage (V(oc)) of nearly 600 mV. Proof-of-concept cell structures were prepared on p-type c-Si wafers of electrical resistivity 1 X cm. Any oxide layer at the interface significantly deteriorates the cell parameters. In a cell prepared using evaporated n-Bi(2)S(3) on (p) c-Si, J(sc) is 3 mA/cm(2); Voc is 360 mV; and g is 0.5%; which improved to: 7.2 mA/cm(2), 485 mV and 1.7%, respectively, after heating the cell in forming gas. A cell with an Sb(2)S(3) (40 nm) thin film as an antireflective coating on Bi(2)S(3), produced
Filiaciones:
Becerra, D:
Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
Nair, MTS:
Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
Nair, PK:
Univ Nacl Autonoma Mexico, Ctr Invest Energia, Temixco 62580, Morelos, Mexico
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