Fabrication and characterization of n-CdSe0.7Te0.3/p-CdSe0.15Te0.85 solar cell
Por:
Muthukumarasamy N., Velumani S., Balasundaraprabhu R., Jayakumar S., Kannan M.D.
Publicada:
19 may 2010
Resumen:
Hot wall deposited CdSexTe1-x where 0 <= x <= 1 thin films for solar cell applications have been prepared from a compound synthesized by direct reaction of high purity Cd, Se and Te elements. Crystal structure and composition of the films were analyzed by X-ray diffraction, scanning electron microscope and EDAX. X-ray diffraction studies carried out on pseudo-binary system revealed that the films are polycrystalline in nature with CdSe0.7Te0.3 film exhibiting hexagonal structure and CdSe0.15Te0.85 film exhibiting cubic zinc blende structure. The type of conduction was determined by Hall studies. A novel solar cell with structure n-CdSe0.7Te0.3/p-CdSe0.15Te0.85 has been fabricated and the efficiency was found to be 3.13%. (C) 2009 Elsevier Ltd. All rights reserved.
Filiaciones:
Muthukumarasamy N.:
Physics Department, Coimbatore Institute of Technology, Coimbatore, 641014, India
Velumani S.:
Department of Electrical Engineering (SEES), CINVESTAV-IPN, Avenida IPN #2508, Col Zacatenco, Zacatenco, D.F. C.P. 07360, Mexico
Balasundaraprabhu R.:
Thin Film Centre, P.S.G. College of Technology, Coimbatore, 641004, India
Jayakumar S.:
Thin Film Centre, P.S.G. College of Technology, Coimbatore, 641004, India
Kannan M.D.:
Thin Film Centre, P.S.G. College of Technology, Coimbatore, 641004, India
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