Electrical characterization of interface defects in MOS structures containing silicon nanoclusters
Por:
Arias A., Nedev N., Curiel M., Nesheva D., Manolov E., Valdez B., Mateos D., Contreras O., Raymond O., Siqueiros J.M.
Publicada:
1 ene 2014
Categoría:
Engineering (miscellaneous)
Resumen:
The effect of annealing temperature on the properties of c-Si wafer/SiOx interface (x = 1.15 and 1.3) is studied by Transmission Electron Microscopy and Capacitance/Conductance-Voltage measurements. Furnace annealing for 60 min at 700 and 1000°C is used to grow amorphous or crystalline Si nanoparticles. The high temperature process leads to an epitaxial overgrowth of the Si wafer and an increase of the interface roughness, 3-4 monolayers at 700°C and 4-5 monolayers at 1000 °C. The increased surface roughness is in correlation with the higher density of electrically active interface states. © (2014) Trans Tech Publications, Switzerland.
Filiaciones:
Arias A.:
Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C.,, Mexico
Nedev N.:
Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C.,, Mexico
Curiel M.:
Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C.,, Mexico
Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, A. P. 14, C. P. 22800 Ensenada, B.C, Mexico
Nesheva D.:
Chaussee Blvd, Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko, 1784 Sofia, Bulgaria
Manolov E.:
Chaussee Blvd, Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko, 1784 Sofia, Bulgaria
Valdez B.:
Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C.,, Mexico
Mateos D.:
Institute of Engineering, Autonomous University of Baja California, Benito Juarez Blvd. esc. Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C.,, Mexico
Contreras O.:
Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, A. P. 14, C. P. 22800 Ensenada, B.C, Mexico
Raymond O.:
Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, A. P. 14, C. P. 22800 Ensenada, B.C, Mexico
Siqueiros J.M.:
Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, A. P. 14, C. P. 22800 Ensenada, B.C, Mexico
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