Stoichiometry monitor in plasma assisted deposition using optical spectroscopy
Por:
Raymond O., Salinas J., Camacho J., Guevara M., Machorro R.
Publicada:
1 ene 2007
Resumen:
A simple procedure to monitor the chemical stoichiometry during the plasma assisted deposition processes is presented. With this technique a better control of the deposition parameters is obtained. A direct observation of some predefined spectral ines allows a predictable layer composition. © 2007 Optical Society of America.
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