Mobility-lifetime products in glow discharge and rf sputter deposited a-Si:H
Por:
Farias M.H., Roche A., Weisz S.Z., Jia H., Shinar J., Lubianiker Y., Balberg I.
Publicada:
1 ene 1994
Resumen:
A comparative study of the deposition temperature (Ts) dependence of the mobility-lifetime (??) products of the charge carriers in glow-discharge and rf sputter-deposited a-Si:H is described and discussed. The Ts-dcpendence of the ??'s and the majority carrier light-intensity exponents of the two types of films are strikingly similar. These observations lead to the conclusion that the structure of the recombination levels as well as the recombination processes are in accord with the "defect pool" model, in contrast to previous suggestions. The differences between the two types of films thus appear to be limited to the differences in the concentrations of dangling bonds. © 1994 Materials Research Society.
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